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Mapping brain activity with flexible graphene micro-transistors
Blaschke, Benno M. (Technische Universität München. Physik Department)
Tort-Colet, Núria (Institut d'Investigacions Biomèdiques August Pi i Sunyer (IDIBAPS))
Guimerà Brunet, Anton (Instituto de Microelectronica de Barcelona)
Weinert, Julia (Institut d'Investigacions Biomèdiques August Pi i Sunyer (IDIBAPS))
Rousseau, Lionel (Université Paris-Est. Laboratoire d'Electronique, Systèmes de Communication et Microsystèmes)
Heimann, Axel (Johannes Gutenberg-Universität Mainz)
Drieschner, Simon (Technische Universität München. Physik Department)
Kempski, Oliver (Johannes Gutenberg-Universität Mainz)
Villa, Rosa (Instituto de Microelectronica de Barcelona)
Sánchez-Vives, María V. (Institut d'Investigacions Biomèdiques August Pi i Sunyer (IDIBAPS))
Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)

Date: 2017
Abstract: Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e. g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future generation of in vivo recording implants.
Note: Número d'acord de subvenció EC/H2020/696656
Note: Número d'acord de subvenció EC/FP7/600806
Note: Número d'acord de subvenció EC/FP7/280433
Note: Número d'acord de subvenció MINECO/SEV-2013-0295
Rights: Tots els drets reservats
Language: Anglès.
Document: article ; recerca ; acceptedVersion
Subject: Bioelectronics ; Field-effect transistors ; Graphene ; Neural implants ; Sensors
Published in: 2D materials, Vol. 4, no. 2 (June 2017) , art. 025040, ISSN 20531583

DOI: 10.1088/2053-1583/aa5eff


Post-print
16 p, 4.4 MB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (scientific output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles

 Record created 2018-04-30, last modified 2019-10-04



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