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Frequency response of electrolyte-gated graphene electrodes and transistors
Drieschner, Simon (Technische Universität München. Physik Department)
Guimerà Brunet, Anton (Instituto de Microelectronica de Barcelona)
Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia)
Viana Casals, Damià (Institut Català de Nanociència i Nanotecnologia)
Makrygiannis, Evangelos (Technische Universität München. Physik Department)
Blaschke, Benno M. (Technische Universität München. Physik Department)
Vieten, Josua (Technische Universität München. Physik Department)
Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)

Date: 2017
Abstract: The interface between graphene and aqueous electrolytes is of high importance for applications of graphene in the field of biosensors and bioelectronics. The graphene/electrolyte interface is governed by the low density of states of graphene that limits the capacitance near the Dirac point in graphene and the sheet resistance. While several reports have focused on studying the capacitance of graphene as a function of the gate voltage, the frequency response of graphene electrodes and electrolyte-gated transistors has not been discussed so far. Here, we report on the impedance characterization of single layer graphene electrodes and transistors, showing that due to the relatively high sheet resistance of graphene, the frequency response is governed by the distribution of resistive and capacitive circuit elements along the graphene/electrolyte interface. Based on an analytical solution for the impedance of the distributed circuit elements, we model the graphene/electrolyte interface both for the electrode and the transistor configurations. Using this model, we can extract the relevant material and device parameters such as the voltage-dependent intrinsic sheet and series resistances as well as the interfacial capacitance. The model also provides information about the frequency threshold of electrolyte-gated graphene transistors, above which the device exhibits a non-resistive response, offering an important insight into the suitable frequency range of operation of electrolyte-gated graphene devices.
Note: Número d'acord de subvenció EC/H2020/696656
Note: Número d'acord de subvenció MINECO/SEV-2013-0295
Rights: Tots els drets reservats
Language: Anglès.
Document: article ; recerca ; acceptedVersion
Subject: Graphene ; Distributed elements ; Impedance ; Electrode ; Transistor
Published in: Journal of physics D: applied physics, Vol. 50, no. 9 (Feb. 2017) , art. 095304, ISSN 00223727

DOI: 10.1088/1361-6463/aa5443


Post-print
13 p, 4.7 MB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (scientific output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles

 Record created 2018-04-30, last modified 2019-10-04



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