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Frequency response of electrolyte-gated graphene electrodes and transistors
Drieschner, Simon (Technische Universität München. Physik Department)
Guimerà Brunet, Anton (Instituto de Microelectronica de Barcelona)
Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia)
Viana Casals, Damià (Institut Català de Nanociència i Nanotecnologia)
Makrygiannis, Evangelos (Technische Universität München. Physik Department)
Blaschke, Benno M. (Technische Universität München. Physik Department)
Vieten, Josua (Technische Universität München. Physik Department)
Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)

Data: 2017
Resum: The interface between graphene and aqueous electrolytes is of high importance for applications of graphene in the field of biosensors and bioelectronics. The graphene/electrolyte interface is governed by the low density of states of graphene that limits the capacitance near the Dirac point in graphene and the sheet resistance. While several reports have focused on studying the capacitance of graphene as a function of the gate voltage, the frequency response of graphene electrodes and electrolyte-gated transistors has not been discussed so far. Here, we report on the impedance characterization of single layer graphene electrodes and transistors, showing that due to the relatively high sheet resistance of graphene, the frequency response is governed by the distribution of resistive and capacitive circuit elements along the graphene/electrolyte interface. Based on an analytical solution for the impedance of the distributed circuit elements, we model the graphene/electrolyte interface both for the electrode and the transistor configurations. Using this model, we can extract the relevant material and device parameters such as the voltage-dependent intrinsic sheet and series resistances as well as the interfacial capacitance. The model also provides information about the frequency threshold of electrolyte-gated graphene transistors, above which the device exhibits a non-resistive response, offering an important insight into the suitable frequency range of operation of electrolyte-gated graphene devices.
Nota: Número d'acord de subvenció EC/H2020/696656
Nota: Número d'acord de subvenció MINECO/SEV-2013-0295
Drets: Tots els drets reservats
Llengua: Anglès.
Document: article ; recerca ; acceptedVersion
Matèria: Graphene ; Distributed elements ; Impedance ; Electrode ; Transistor
Publicat a: Journal of physics D: applied physics, Vol. 50, no. 9 (Feb. 2017) , art. 095304, ISSN 00223727

DOI: 10.1088/1361-6463/aa5443

13 p, 4.7 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2018-04-30, darrera modificació el 2019-06-17

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