Near-field photocurrent nanoscopy on bare and encapsulated graphene
Woessner, Achim (Institut de Ciències Fotòniques)
Alonso González, Pablo (Chinese Academy of Sciences. Institute of Physics)
Lundeberg, Mark B. (Institut de Ciències Fotòniques)
Gao, Yuanda (Columbia University)
Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia)
Navickaite, Gabriele (Institut de Ciències Fotòniques)
Ma, Qiong (Massachusetts Institute of Technology. Department of Physics)
Janner, Davide (Institut de Ciències Fotòniques)
Watanabe, Kenji (National Institute for Materials Science (Tsukuba, Japó))
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Taniguchi, Takashi (National Institute for Materials Science (Tsukuba, Japó))
Pruneri, Valerio (Institut de Ciències Fotòniques)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Jarillo-Herrero, Pablo (Massachusetts Institute of Technology. Department of Physics)
Hone, James (Columbia University. Department of Mechanical Engineering)
Hillenbrand, Rainer (CIC nanoGUNE (Sant Sebastià, País Basc))
Koppens, Frank (Institut de Ciències Fotòniques)

Date:	2016
Abstract:	Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. A major roadblock towards high-performance devices are nanoscale variations of the graphene device properties, impacting their macroscopic behaviour. Here we present and apply non-invasive optoelectronic nanoscopy to measure the optical and electronic properties of graphene devices locally. This is achieved by combining scanning near-field infrared nanoscopy with electrical read-out, allowing infrared photocurrent mapping at length scales of tens of nanometres. Using this technique, we study the impact of edges and grain boundaries on the spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can readily be applied to encapsulated graphene devices. We observe charge build-up near the edges and demonstrate a solution to this issue.
Grants:	Ministerio de Economía y Competitividad SEV-2015-0522 European Commission 294056 European Commission 307806 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1535 Ministerio de Economía y Competitividad RYC-2012-12281 Ministerio de Economía y Competitividad FIS2013-47161-P European Commission 613024 European Commission 604391 Ministerio de Economía y Competitividad TEC2013-46168-R Ministerio de Economía y Competitividad MAT2012-33911 Ministerio de Economía y Competitividad SEV-2013-0295
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Published in:	Nature communications, Vol. 7 (February 2016) , article 10783, ISSN 2041-1723

DOI: 10.1038/ncomms10783
PMID: 26916951

7 p, 1.1 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles