Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
Queraltó López, Albert (Institut de Ciència de Materials de Barcelona)
Pérez del Pino, Ángel (Institut de Ciència de Materials de Barcelona)
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Tristany, Mar (Institut de Ciència de Materials de Barcelona)
Obradors, Xavier (Institut de Ciència de Materials de Barcelona)
Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona)

Fecha:	2016
Resumen:	The crystallization process and physical properties of different functional oxide thin films (CeZrO, LaNiO, BaSrTiO, and LaSrMnO) on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) are studied by pulsed laser annealing (PLA). A Nd:YAG laser source (λ = 266 nm, 10 Hz and τ ∼3 ns) is employed to crystallize chemical solution deposited (CSD) amorphous/nanocrystalline films under atmospheric conditions. We provide new insight on the influence of photochemical and photothermal interactions on the epitaxial crystallization kinetics of oxide thin films during the transformation from amorphous/polycrystalline material (i. e. , atomic diffusion, epitaxial growth rates, and activation energies of nucleation and crystallization). The epitaxial growth is investigated by varying the laser fluence and the applied number of pulses. The morphology, structure, and epitaxial evolution of films are evaluated by means of atomic force and transmission electron microscopies and X-ray diffraction. Highly epitaxial oriented films of 20-40 nm in thickness are obtained by PLA. The crystallization kinetics of laser treatments is determined to be orders of magnitude faster than thermal treatments with similar activation energies (1. 5-4. 1 eV), mainly due to the large temperature gradients inducing modified atomic diffusion mechanisms derived mainly from photothermal interactions, as well as a minor contribution of photochemical effects. The fast heating rates achieved by PLA also contribute to the fast epitaxial growth due to reduced coarsening of polycrystalline material. The measurement of the physical properties (electrical resistivity and magnetism) of laser processed CSD films has revealed significantly good functionalities, close to those of thermally grown films, but with much shorter processing times.
Ayudas:	Ministerio de Economía y Competitividad MAT2014-51778-C2-1-R Ministerio de Economía y Competitividad CSD2007-00041 Ministerio de Economía y Competitividad MAT2011-28874-C02-01 Ministerio de Economía y Competitividad ENE2014-56109-C3-3-R Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-770 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638 Agència de Gestió d'Ajuts Universitaris i de Recerca 2015/SGR-753
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Atmospheric conditions ; Crystallization process ; Epitaxial crystallization ; Fast epitaxial growths ; Photo-thermal interaction ; Photochemical effect ; Pulsed laser annealing ; Single crystal substrates
Publicado en:	Chemistry of materials, Vol. 28, Núm. 17 (September 2016) , p. 6136-6145, ISSN 1520-5002

DOI: 10.1021/acs.chemmater.6b01968

Post-print 15 p, 1.1 MB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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