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Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions
Queraltó López, Albert (Institut de Ciència de Materials de Barcelona)
Pérez del Pino, Ángel (Institut de Ciència de Materials de Barcelona)
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Tristany, Mar (Institut de Ciència de Materials de Barcelona)
Obradors, Xavier (Institut de Ciència de Materials de Barcelona)
Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona)

Data: 2016
Resum: The crystallization process and physical properties of different functional oxide thin films (CeZrO, LaNiO, BaSrTiO, and LaSrMnO) on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) are studied by pulsed laser annealing (PLA). A Nd:YAG laser source (λ = 266 nm, 10 Hz and τ ∼3 ns) is employed to crystallize chemical solution deposited (CSD) amorphous/nanocrystalline films under atmospheric conditions. We provide new insight on the influence of photochemical and photothermal interactions on the epitaxial crystallization kinetics of oxide thin films during the transformation from amorphous/polycrystalline material (i. e. , atomic diffusion, epitaxial growth rates, and activation energies of nucleation and crystallization). The epitaxial growth is investigated by varying the laser fluence and the applied number of pulses. The morphology, structure, and epitaxial evolution of films are evaluated by means of atomic force and transmission electron microscopies and X-ray diffraction. Highly epitaxial oriented films of 20-40 nm in thickness are obtained by PLA. The crystallization kinetics of laser treatments is determined to be orders of magnitude faster than thermal treatments with similar activation energies (1. 5-4. 1 eV), mainly due to the large temperature gradients inducing modified atomic diffusion mechanisms derived mainly from photothermal interactions, as well as a minor contribution of photochemical effects. The fast heating rates achieved by PLA also contribute to the fast epitaxial growth due to reduced coarsening of polycrystalline material. The measurement of the physical properties (electrical resistivity and magnetism) of laser processed CSD films has revealed significantly good functionalities, close to those of thermally grown films, but with much shorter processing times.
Ajuts: Ministerio de Economía y Competitividad MAT2014-51778-C2-1-R
Ministerio de Economía y Competitividad CSD2007-00041
Ministerio de Economía y Competitividad MAT2011-28874-C02-01
Ministerio de Economía y Competitividad ENE2014-56109-C3-3-R
Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-770
Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638
Agència de Gestió d'Ajuts Universitaris i de Recerca 2015/SGR-753
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió acceptada per publicar
Matèria: Atmospheric conditions ; Crystallization process ; Epitaxial crystallization ; Fast epitaxial growths ; Photo-thermal interaction ; Photochemical effect ; Pulsed laser annealing ; Single crystal substrates
Publicat a: Chemistry of materials, Vol. 28, Núm. 17 (September 2016) , p. 6136-6145, ISSN 1520-5002

DOI: 10.1021/acs.chemmater.6b01968


Post-print
15 p, 1.1 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2018-09-07, darrera modificació el 2022-09-10



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