Tunneling anisotropic magnetoresistance in La2/3Sr1/3MnO3/LaAlO3/Pt tunnel junctions
Galceran, Regina (Institut de Ciència de Materials de Barcelona)
Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona)
Pomar, Alberto (Institut de Ciència de Materials de Barcelona)
Konstantinovic, Zorica (University of Belgrade. Center for Solid State Physics and New Materials)
Bagués Salgueró, Núria (Institut Català de Nanociència i Nanotecnologia)
Sandiumenge Ortiz, Felip (Institut de Ciència de Materials de Barcelona)
Martínez, Benjamín (Institut de Ciència de Materials de Barcelona)

Date:	2016
Abstract:	The magnetotransport properties of La2/3 Sr1/3 MnO3 (LSMO)/ LaAlO3 (LAO)/Pt tunneling junctions have been analyzed as a function of temperature and magnetic field. The junctions exhibit magnetoresistance (MR) values of about 37%, at H=90 kOe at low temperature. However, the temperature dependence of MR indicates a clear distinct origin than that of conventional colossal MR. In addition, tunneling anisotropic MR (TAMR) values around 4% are found at low temperature and its angular dependence reflects the expected uniaxial anisotropy. The use of TAMR response could be an alternative of much easier technological implementation than conventional MTJs since only one magnetic electrode is required, thus opening the door to the implementation of more versatile devices. However, further studies are required in order to improve the strong temperature dependence at the present stage.
Grants:	Ministerio de Economía y Competitividad SEV-2015-0496 Ministerio de Economía y Competitividad MAT2015-71664-R
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Angular dependence ; Low temperatures ; Magnetic electrodes ; Magneto transport properties ; Temperature dependence ; Tunneling anisotropic magnetoresistances ; Tunneling junctions ; Uniaxial anisotropy
Published in:	AIP advances, Vol. 6, Issue 4 (April 2016) , art. 045305, ISSN 2158-3226

DOI: 10.1063/1.4946851

8 p, 2.2 MB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles