visitante ::
identificación
|
|||||||||||||||
Buscar | Enviar | Ayuda | Servicio de Bibliotecas | Sobre el DDD | Català English Español |
Página principal > Artículos > Artículos publicados > Self-Arranged Misfit Dislocation Network Formation upon Strain Release in La0.7Sr0.3MnO3/LaAlO3(100) Epitaxial Films under Compressive Strain |
Fecha: | 2016 |
Resumen: | Lattice-mismatched epitaxial films of LaSrMnO (LSMO) on LaAlO (001) substrates develop a crossed pattern of misfit dislocations above a critical thickness of 2. 5 nm. Upon film thickness increases, the dislocation density progressively increases, and the dislocation spacing distribution becomes narrower. At a film thickness of 7. 0 nm, the misfit dislocation density is close to the saturation for full relaxation. The misfit dislocation arrangement produces a 2D lateral periodic structure modulation (Λ≈ 16 nm) alternating two differentiated phases: one phase fully coherent with the substrate and a fully relaxed phase. This modulation is confined to the interface region between film and substrate. This phase separation is clearly identified by X-ray diffraction and further proven in the macroscopic resistivity measurements as a combination of two transition temperatures (with low and high T). Films thicker than 7. 0 nm show progressive relaxation, and their macroscopic resistivity becomes similar than that of the bulk material. Therefore, this study identifies the growth conditions and thickness ranges that facilitate the formation of laterally modulated nanocomposites with functional properties notably different from those of fully coherent or fully relaxed material. |
Ayudas: | Ministerio de Economía y Competitividad MAT2011-29081-C02 Ministerio de Economía y Competitividad MAT2012-33207 Ministerio de Economía y Competitividad MAT2013-47869-C4-1-P Ministerio de Economía y Competitividad CSD2008-00023 European Commission 645658 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-501 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1216 |
Derechos: | Tots els drets reservats. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió acceptada per publicar |
Materia: | Strain relaxation ; Misfit dislocation arrangement ; Nanophase modulation ; Nanotemplate |
Publicado en: | ACS applied materials & interfaces, Vol. 8, Issue 26 (July 2016) , p. 16823-16832, ISSN 1944-8252 |
Postprint 40 p, 1.8 MB |