Optical emission of GaN/AlN quantum-wires-the role of charge transfer from a nanowire template
Müßener, Jan (Universität Bremen. Institut für Festkörperphysik)
Greif, Ludwig A. Th. (Technische Universität Berlin. Institut für Festkörperphysik)
Kalinowski, Stefan (Technische Universität Berlin. Institut für Festkörperphysik)
Callsen, Gordon (Technische Universität Berlin. Institut für Festkörperphysik)
Hille, Pascal (Universität Bremen. Institut für Festkörperphysik)
Schörmann, Jörg (Justus-Liebig-Universität Gießen. I. Physikalisches Institut und Zentrum für Materialforschung)
Wagner, Markus R.. (Technische Universität Berlin. Institut für Festkörperphysik)
Schliwa, Andrei (Technische Universität Berlin. Institut für Festkörperphysik)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Hoffmann, Axel (Technische Universität Berlin. Institut für Festkörperphysik)
Eickhoff, Martin (Universität Bremen. Institut für Festkörperphysik)

Fecha:	2018
Resumen:	We show that one-dimensional (1d) GaN quantum-wires (QWRs) exhibit intense and spectrally sharp emission lines. These QWRs are realized in an entirely self-assembled growth process by molecular beam epitaxy (MBE) on the side facets of GaN/AlN nanowire (NW) heterostructures. Time-integrated and time-resolved photoluminescence (PL) data in combination with numerical calculations allow the identification and assignment of the manifold emission features to three different spatial recombination centers within the NWs. The recombination processes in the QWRs are driven by efficient charge carrier transfer effects between the different optically active regions, providing high intense QWR luminescence despite their small volume. This is deduced by a fast rise time of the QWR PL, which is similar to the fast decay-time of adjacent carrier reservoirs. Such processes, feeding the ultra-narrow QWRs with carriers from the relatively large NWs, can be the key feature towards the realization of future QWR-based devices. While processing of single quantum structures with diameters in the nm range presents a serious obstacle with respect to their integration into electronic or photonic devices, the QWRs presented here can be analyzed and processed using existing techniques developed for single NWs.
Ayudas:	European Commission 654360 European Commission 312483 Ministerio de Economía y Competitividad ENE2017-85087-C3 Ministerio de Economía y Competitividad SEV-2013-0295 Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Charge carrier transfer ; Emission features ; Numerical calculation ; Optical emissions ; Recombination centers ; Recombination process ; Self-assembled growth ; Time-resolved photoluminescence
Publicado en:	Nanoscale, Issue 10 (2018) , p. 5591-5598, ISSN 2040-3372

DOI: 10.1039/c7nr08057c

Preprint 9 p, 2.9 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
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