GFET asymmetric transfer response analysis through access region resistances
Toral-Lopez, Alejandro (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores)
Marin, Enrique G. (Universitá di Pisa. Dipartimento di Ingegneria dell'Informazione)
Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Gonzalez Medina, Jose Maria (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores)
Ruiz, Francisco G. (Universidad de Granada. Laboratorio de Investigación Avanzada de Electrónica Penetrante)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Godoy Medina, Andres (Universidad de Granada. Laboratorio de Investigación Avanzada de Electrónica Penetrante)

Date:	2019
Abstract:	Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentrated on achieving high mobility samples. However, little attention has been paid, so far, to the role of the access regions in these devices. Here, we analyse in detail, via numerical simulations, how the GFET transfer response is severely impacted by these regions, showing that they play a significant role in the asymmetric saturated behaviour commonly observed in GFETs. We also investigate how the modulation of the access region conductivity (i. e. , by the influence of a back gate) and the presence of imperfections in the graphene layer (e. g. , charge puddles) affects the transfer response. The analysis is extended to assess the application of GFETs for RF applications, by evaluating their cut-off frequency.
Grants:	Ministerio de Economía y Competitividad TEC2017-89955-P Ministerio de Economía y Competitividad TEC2015-67462-C2-1-R Ministerio de Economía y Competitividad IJCI-2017-32297 Ministerio de Economía y Competitividad FPU16/04043 Ministerio de Economía y Competitividad FPU14/02579 European Commission 785219
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	GFET ; RF ; Access region
Published in:	Nanomaterials, Vol. 9, Issue 7 (July 2019) , art. 1027, ISSN 2079-4991

DOI: 10.3390/nano9071027
PMID: 31323809

12 p, 530.3 KB

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