Proximity-induced spin-orbit coupling in graphene/ Bi1.5Sb0.5Te1.7Se1.3 heterostructures
Jafarpisheh, S. (Peter Grünberg Institute)
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia)
Watanabe, Kenji (National Institute for Material Science (Tsukuba, Japan))
Taniguchi, Takashi (National Institute for Material Science (Tsukuba, Japan))
Beschoten, Bernd (RWTH Aachen University)
Stampfer, Cristoph (RWTH Aachen University)

Fecha:	2018
Resumen:	The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here, we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological insulator Bi1. 5Sb0. 5Te1. 7Se1. 3 (BSTS) which was grown on a hBN substrate by vapor solid synthesis. Phase coherent transport measurements, revealing weak localization, allow us to extract the carrier density-dependent phase coherence length lφ. While lφ increases with increasing carrier density in the hBN/graphene/hBN reference sample, it decreases in graphene/BSTS due to the proximity coupling of BSTS to graphene. The latter behavior results from D'yakonov-Perel'-type spin scattering in graphene with a large proximity-induced spin-orbit coupling strength of at least 2. 5 meV.
Ayudas:	European Commission 785219 Ministerio de Economía y Competitividad SEV-2013-0295
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió acceptada per publicar
Materia:	Spin relaxation ; Spin-orbit coupling ; Weak localization
Publicado en:	Physical review B, Vol. 98, Issue 24 (December 2018) , art. 241402, ISSN 2469-9969

DOI: 10.1103/PhysRevB.98.241402

Postprint 7 p, 2.8 MB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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