Home > Articles > Published articles > Proximity-induced spin-orbit coupling in graphene/ Bi1.5Sb0.5Te1.7Se1.3 heterostructures |
Date: | 2018 |
Abstract: | The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here, we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological insulator Bi1. 5Sb0. 5Te1. 7Se1. 3 (BSTS) which was grown on a hBN substrate by vapor solid synthesis. Phase coherent transport measurements, revealing weak localization, allow us to extract the carrier density-dependent phase coherence length lφ. While lφ increases with increasing carrier density in the hBN/graphene/hBN reference sample, it decreases in graphene/BSTS due to the proximity coupling of BSTS to graphene. The latter behavior results from D'yakonov-Perel'-type spin scattering in graphene with a large proximity-induced spin-orbit coupling strength of at least 2. 5 meV. |
Grants: | European Commission 785219 Ministerio de Economía y Competitividad SEV-2013-0295 |
Rights: | Tots els drets reservats. |
Language: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Subject: | Spin relaxation ; Spin-orbit coupling ; Weak localization |
Published in: | Physical review B, Vol. 98, Issue 24 (December 2018) , art. 241402, ISSN 2469-9969 |
Postprint 7 p, 2.8 MB |