Results overview: Found 5 records in 0.16 seconds.
Articles, 3 records found
Research literature, 2 records found
Articles 3 records found  
1.
27 p, 2.2 MB Magnetism, symmetry and spin transport in van der Waals layered systems / Kurebayashi, Hidekazu (London Centre for Nanotechnology. UCL) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Khan, Safe (London Centre for Nanotechnology. UCL) ; Sinova, Jairo (Academy of Sciences of the Czech Republic. Institute of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The discovery of an ever-increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling and topological systems, calls for some guiding principles to tailor and optimize novel spin transport and optical properties at their interfaces. [...]
2022 - 10.1038/s42254-021-00403-5
Nature Reviews Physics, Vol. 4, issue 3 (March 2022) , p. 150-166  
2.
9 p, 750.9 KB Low-symmetry topological materials for large charge-to-spin interconversion : the case of transition metal dichalcogenide monolayers / Vila Tusell, Marc (Universitat Autònoma de Barcelona. Departament de Física) ; Hsu, Chuang-Han (National University of Singapore. Department of Electrical and Computer Engineering) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Benítez, L. Antonio (Institut Català de Nanociència i Nanotecnologia) ; Waintal, Xavier (Université Grenoble Alpes. Commissariat à l'énergie atomique et aux énergies alternatives) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Pereira, Víctor M. (National University of Singapore. Centre for Advanced 2D Materials and Graphene Research Centre) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. [...]
2021 - 10.1103/PhysRevResearch.3.043230
Physical Review Research, Vol. 3, issue 4 (Dec. 2021) , art. 43230  
3.
7 p, 2.8 MB Proximity-induced spin-orbit coupling in graphene/ Bi1.5Sb0.5Te1.7Se1.3 heterostructures / Jafarpisheh, S. (Peter Grünberg Institute) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Watanabe, Kenji (National Institute for Material Science (Tsukuba, Japan)) ; Taniguchi, Takashi (National Institute for Material Science (Tsukuba, Japan)) ; Beschoten, Bernd (RWTH Aachen University) ; Stampfer, Cristoph (RWTH Aachen University)
The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here, we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological insulator Bi1. [...]
2018 - 10.1103/PhysRevB.98.241402
Physical review B, Vol. 98, Issue 24 (December 2018) , art. 241402  

Research literature 2 records found  
1.
139 p, 7.1 MB Spin-orbit coupling in graphene/transition metal dichalcogenides devices / Benítez, L. Antonio ; Valenzuela, Sergio O, dir. ; Roche, Stephan Jean Louis, dir. ; Costache, Marius Vasile, dir. ; Mompart Penina, Jordi, dir.
Aquest treball s'emmarca dins els camps de l'espintrònica i la spin-orbitrònica, l'objectiu final del qual és controlar el grau de llibertat de l'espín de l'electró mitjançant l'acoblament spin-òrbita (SOC) en sistemes d'estat sòlid. [...]
El presente trabajo se encuentra dentro de los campos de la espintrónica y la espín-orbitrónica, cuyo objetivo final es controlar el grado de libertad de espín del electrón mediante el acoplamiento espín-órbita (SOC) en sistemas de estado sólido. [...]
The presented work is within the fields of spintronics and spin-orbitronics, whose final aim is to control the electron's spin degree of freedom via the spin-orbit coupling (SOC) in solid-state systems. [...]

2020  
2.
228 p, 4.6 MB Charge and Spin Transport in Disordered Graphene-Based Materials / Dinh, Van Tuan ; Roche, Stephan, dir. ; Pascual i Gainza, Jordi, tut. ; Universitat Autònoma de Barcelona. Departament de Física
Esta tesis está enfocada en la modelización y simulación del transporte de carga y spin en materiales bidimensionales basados en Grafeno, así como en el impacto de la policristalinidad en el rendimiento de transistores de efecto campo diseñados con este tipo de materiales. [...]
This thesis is focused on modeling and simulation of charge and spin transport in two dimensional graphene-based materials as well as the impact of graphene polycrystallinity on the performance of graphene field-effect transistors. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2014  

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