P-type β-gallium oxide : a new perspective for power and optoelectronic devices
Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS)
Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia)
Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics)
Ton-That, C. (University of Technology Sydney)
Huynh, Tung Thanh (University of Technology Sydney)
Phillips, Matthew (University of Technology Sydney)
Russell, Stephen A. O. (University of Warwick)
Jennings, M. R. (University of Warwick)
Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS)
Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS)
Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)

Date:	2017
Abstract:	Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1. 1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga O (crystal) - O (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of β-Ga O of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices.
Grants:	Ministerio de Economía y Competitividad ENE2015-74275-JIN Ministerio de Economía y Competitividad SEV-2013-0295
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	Wide band gap semiconductor ; Beta-Ga2O3 ; Electrical properties ; Hole conductivity ; Thermodynamic calculations
Published in:	Materials today physics, Vol. 3 (December 2017) , p. 118-126, ISSN 2542-5293

DOI: 10.1016/j.mtphys.2017.10.002

Preprint 19 p, 1.0 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles