Distortion-free sensing of neural activity using graphene transistors
Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia)
Masvidal Codina, Eduard (Institut de Microelectrònica de Barcelona)
De la Cruz, Jose (Institut Català de Nanociència i Nanotecnologia)
Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia)
Schwesig, Gerrit (Ludwig-Maximilians-Universität München. Faculty of Medicine)
Jeschke, C. (Multi Channel Systems (MCS) GmbH)
Martínez-Aguilar, Javier (Institut de Microelectrònica de Barcelona)
Sánchez-Vives, María V (Institució Catalana de Recerca i Estudis Avançats)
Villa, Rosa (Institut de Microelectrònica de Barcelona)
Illa, Xavi (Institut de Microelectrònica de Barcelona)
Sirota, Anton (Ludwig-Maximilians-Universität München. Faculty of Medicine)
Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona)
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)

Fecha:	2020
Resumen:	Graphene solution-gated field-effect transistors (g-SGFETs) are promising sensing devices to transduce electrochemical potential signals in an electrolyte bath. However, distortion mechanisms in g-SGFET, which can affect signals of large amplitude or high frequency, have not been evaluated. Here, a detailed characterization and modeling of the harmonic distortion and non-ideal frequency response in g-SGFETs is presented. This accurate description of the input-output relation of the g-SGFETs allows to define the voltage- and frequency-dependent transfer functions, which can be used to correct distortions in the transduced signals. The effect of signal distortion and its subsequent calibration are shown for different types of electrophysiological signals, spanning from large amplitude and low frequency cortical spreading depression events to low amplitude and high frequency action potentials. The thorough description of the distortion mechanisms presented in this article demonstrates that g-SGFETs can be used as distortion-free signal transducers not only for neural sensing, but also for a broader range of applications in which g-SGFET sensors are used.
Ayudas:	European Commission 785219 European Commission 732032 Ministerio de Ciencia e Innovación FIS2017-85787-R Ministerio de Economía y Competitividad SEV-2017-0706 Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-1426
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Frequency response ; Graphene ; Harmonic distortion ; Neural sensing ; Solution-gated field-effect transistors
Publicado en:	Small, Vol. 16, issue 16 (April 2020) , art. 1906640, ISSN 1613-6829

DOI: 10.1002/smll.201906640

Preprint 35 p, 2.0 MB

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