Ion bombardment induced formation of self-organized wafer-scale GaInP nanopillar assemblies
Visser, Dennis (Kungl. Tekniska högskolan (Estocolm (Suècia))
Jaramillo Fernández, Juliana (Kungl. Tekniska högskolan (Estocolm (Suècia))
Haddad, Gabriel (Kungl. Tekniska högskolan (Estocolm (Suècia))
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Anand, Srinivasan (Kungl. Tekniska högskolan (Estocolm (Suècia))

Fecha:	2020
Resumen:	Ion sputtering assisted formation of nanopillars is demonstrated as a wafer-scale, lithography-free fabrication method to obtain high optical quality gallium indium phosphide (GaInP) nanopillars. Compared to binary materials, little has been reported on the formation of self-organized ternary nanostructures. Epitaxial (100) GaInP layers lattice matched to GaAs were sputtered by nitrogen (N) ions with relatively low ion beam energies (∼400 eV) to reduce ion bombardment induced damage. The influence of process parameters such as temperature, sputter duration, ion beam energy, and ion beam incidence angle on the pillar formation is investigated. The fabricated GaInP nanopillars have average diameters of ∼75-100 nm, height of ∼220 nm, and average density of ∼2-4 × 10 pillars/cm. The authors show that the ion beam incidence angle plays an important role in pillar formation and can be used to tune the pillar shape, diameter, and spatial density. Specifically, tapered to near cylindrical pillar profiles together with a reduction in their average diameters are obtained by varying the ion beam incidence angle from 0° to 20°. A tentative model for the GaInP nanopillar formation is proposed based on transmission electron microscopy and chemical mapping analysis. μ-Photoluminescence and μ-Raman measurements indicate a high optical quality of the c-GaInP nanopillars.
Nota:	The authors would like to acknowledge the support from the Linné Center for Advanced Optics and Photonics (ADOPT; Grant No. 349-2007-8664), the Swedish Research Council (VR), and the Swedish Energy Agency (Energimynigheten; Grant Nos. 45199-1 and 42028-1). The authors thank Frederik Gustavsson for the TEM and EDS measurements.
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Beam incidence angle ; Fabrication method ; Gallium indium phosphide ; Influence of process parameters ; Nanopillar formation ; Raman measurements ; Spatial densities ; Ternary nanostructure
Publicado en:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics, Vol. 38, issue 1 (Jan. 2020) , art. 12801, ISSN 2166-2754

DOI: 10.1116/1.5127265

10 p, 3.1 MB

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