Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices
Zhang, Yu (Institut de Recerca en Energia de Catalunya)
Liu, Yu (Institute of Science and Technology Austria)
Xing, Congcong (Institut de Recerca en Energia de Catalunya)
Zhang, Ting (Institut Català de Nanociència i Nanotecnologia)
Li, Mengyao (Institut de Recerca en Energia de Catalunya)
Pacios Pujadó, Merce (Institut de Recerca en Energia de Catalunya)
Yu, Xiaoting (Institut de Recerca en Energia de Catalunya)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Llorca, Jordi (Universitat Politècnica de Catalunya. Departament d'Enginyeria Química)
Cadavid, Doris (Universidad Nacional de Colombia. Departamento de Física)
Ibáñez, Maria (IST Austria)
Cabot i Codina, Andreu (Institut de Recerca en Energia de Catalunya)

Date:	2020
Abstract:	In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0. 55 W m-1 K-1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i. e. , in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K.
Grants:	European Commission 754411 Agencia Estatal de Investigación RTI2018-093996-B-C31 Ministerio de Economía y Competitividad SEV-2017-0706 Ministerio de Economía y Competitividad ENE2017-85087-C3 Agencia Estatal de Investigación ENE2016-77798-C4-3-R Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-327 Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-128
Note:	Altres ajuts: CERCA Programme/Generalitat de Catalunya.
Rights:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Molecular ink ; SnSe ; Thermoelectricity ; Printing ; Nanomaterial
Published in:	ACS applied materials & interfaces, Vol. 12, issue 24 (June 2020) , p. 27104-27111, ISSN 1944-8252

DOI: 10.1021/acsami.0c04331

Postprint 23 p, 1.9 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles