GaN surface states investigated by electrochemical studies
Winnerl, Andrea (Technische Universität München. Walter Schottky Institut)
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Stutzmann, Martin (Technische Universität München. Walter Schottky Institut)
Date: |
2017 |
Abstract: |
We present a systematic study of electrochemically active surface states on MOCVD-grown n-typeGaN in aqueous electrolytes using cyclic voltammetry and impedance spectroscopy over a widerange of potentials and frequencies. In order to alter the surface states, the GaN samples are eitheretched or oxidized, and the influence of the surface treatment on the defect-mediated chargetransfer to the electrolyte is investigated. Etching in HCl removes substoichiometric GaOx, andleads to a pronounced density of electrochemically active surface states. Oxidation effectivelyremoves these surface states. |
Note: |
Ajuts: financial support from the Deutsche Forschungsgemeinschaft (DFG STU 139/12?1), TUM.solar in the frame of the Bavarian Collaborative Research Project "Solar technologies go Hybrid" (SolTec) and the Excellence Cluster Nanosystems Initiative Munich is gratefully acknowledged. |
Rights: |
Tots els drets reservats. |
Language: |
Anglès |
Document: |
Article ; recerca ; Versió publicada |
Subject: |
Active surfaces ;
Aqueous electrolyte ;
Electrochemical studies ;
Impedance spectroscopy ;
N-type GaN ;
Systematic study |
Published in: |
Applied physics letters, Vol. 110, issue 10 (March 2017) , p. 101602, ISSN 1077-3118 |
DOI: 10.1063/1.4977947
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Record created 2021-04-26, last modified 2022-09-06