GaN surface states investigated by electrochemical studies
Winnerl, Andrea (Technische Universität München. Walter Schottky Institute)
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Stutzmann, Martin (Technische Universität München. Walter Schottky Institute)

Date:	2017
Abstract:	We present a systematic study of electrochemically active surface states on MOCVD-grown n-typeGaN in aqueous electrolytes using cyclic voltammetry and impedance spectroscopy over a widerange of potentials and frequencies. In order to alter the surface states, the GaN samples are eitheretched or oxidized, and the influence of the surface treatment on the defect-mediated chargetransfer to the electrolyte is investigated. Etching in HCl removes substoichiometric GaOx, andleads to a pronounced density of electrochemically active surface states. Oxidation effectivelyremoves these surface states.
Note:	Ajuts: financial support from the Deutsche Forschungsgemeinschaft (DFG STU 139/12?1), TUM.solar in the frame of the Bavarian Collaborative Research Project "Solar technologies go Hybrid" (SolTec) and the Excellence Cluster Nanosystems Initiative Munich is gratefully acknowledged.
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Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Active surfaces ; Aqueous electrolyte ; Electrochemical studies ; Impedance spectroscopy ; N-type GaN ; Systematic study
Published in:	Applied physics letters, Vol. 110, issue 10 (March 2017) , p. 101602, ISSN 1077-3118

DOI: 10.1063/1.4977947

5 p, 819.6 KB

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