A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models
Diaz-Fortuny, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla)
Roca, Elisenda (Instituto de Microelectrónica de Sevilla)
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2019
Abstract:	In modern nanometer-scale CMOS technologies, time-zero and time-dependent variability (TDV) effects, the latter coming from aging mechanisms like Bias Temperature Instability (BTI), Hot Carrier Injection (HCI) or Random Telegraph Noise (RTN), have re-emerged as a serious threat affecting the performance of analog and digital integrated circuits. Variability induced by the aging phenomena can lead circuits to a progressive malfunction or failure. In order to understand the effects of the mentioned variability sources, a precise and sound statistical characterization and modeling of these effects should be done. Typically, transistor TDV characterization entails long, and typically prohibitive, testing times, as well as huge amounts of data, which are complex to post-process. In order to face these limitations, this work presents a new method to statistically characterize the emission times and threshold voltage shifts (Delta V-th) related to oxide defects in nanometer CMOS transistors during aging tests. At the same time, the aging testing methodology significantly reduces testing times by parallelizing the stress. The method identifies the V-th drops associated to oxide trap emissions during BTI and HCI aging recovery traces while removing RTN and background noise contributions, to avoid artifacts during data analysis.
Grants:	Ministerio de Ciencia e Innovación TEC2016-75151-C3-R Ministerio de Ciencia e Innovación BES-2014-067855 Ministerio de Ciencia e Innovación TEC2013-45638-C3-R
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Aging ; BTI ; CMOS ; Defects ; Extraction ; HCI ; Method ; Parameters ; RTN
Published in:	Solid-state electronics, Vol. 159 (Sep. 2019) , p. 99-105, ISSN 0038-1101

DOI: 10.1016/j.sse.2019.03.045

Postprint 8 p, 4.1 MB

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