A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
Claramunt, Sergi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Ruiz, Ana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Wu, Q. (Sun Yat-Sen University)
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2021
Abstract:	Capacitive Metal-Insulator-Semiconductor structures with graphene as interfacial layer between the HfO dielectric and the top electrode have been fabricated and investigated at device level and at the nanoscale with Conductive Atomic Force Microscope. In particular, their electrical properties and variability have been compared to devices without graphene to evaluate their feasibility as ReRAM devices. At device level, we observe that, when graphene is present as an intercalated layer, several resistive switching cycles can be measured, meanwhile the standard structures without graphene do not show resistive switching behavior. Nanoscale analysis showed that the graphene layer prevents the microstructural irreversible damage of the oxide material during a forming process. Therefore, graphene somehow protects the structure during the CF formation. This protection would explain the observation of RS of the devices with intercalated graphene.
Grants:	Agencia Estatal de Investigación TEC2016-75151-C3-1-R
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	ReRAM ; Graphene ; Non-volatile memory ; CAFM
Published in:	Solid-state electronics, Vol. 186 (December 2021) , art. 108080, ISSN 1879-2405

DOI: 10.1016/j.sse.2021.108080

Postprint 11 p, 1.1 MB

The record appears in these collections:
Articles > Research articles
Articles > Published articles