GaO and related ultra-wide bandgap power semiconductor oxides : new energy electronics solutions for CO emission mitigation
Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Asher, Jacob J. (Swansea University. College of Engineering)
Jennings, Mike (Swansea University. College of Engineering)
Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)

Date:	2022
Abstract:	Currently, a significant portion (~50%) of global warming emissions, such as CO, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide-GaO (4. 5-4. 9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asInO, ZnO and SnO, to name a few. Indeed, GaO as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlGaO may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGaO (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.
Grants:	Agencia Estatal de Investigación SEV-2017-0706
Note:	Altres ajuts: the ICN2 is funded by the CERCA programme/Generalitat de Catalunya.
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Energy electronics ; Ultra-wide bandgap ; Power electronics ; Diodes ; Transistors ; Gallium oxide ; GaO ; Spinel ; ZnGaO
Published in:	Materials, Vol. 15, issue 3 (Feb. 2022) , art. 1164, ISSN 1996-1944

DOI: 10.3390/ma15031164
PMID: 35161108

26 p, 7.9 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
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Articles > Published articles