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Página principal > Artículos > Artículos publicados > Passivation of Bi2Te3 topological insulator by transferred CVD-graphene : |
Fecha: | 2022 |
Resumen: | The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X-ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing-free interfaces in the topological insulator BiTe by means of dry-transferred CVD graphene are reported. After air exposure, no traces of BiTe oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in BiTe/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare BiTe under ambient conditions and the deep Bi-Te bonding disruption that occurs in BiTe/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states. |
Ayudas: | European Commission 881603 European Commission 840588 European Commission 713673 Agencia Estatal de Investigación PCI2021-122035-2A Ministerio de Ciencia e Innovación PID2019-111773RB-I00 Ministerio de Economía y Competitividad RYC2019-028368-I Ministerio de Ciencia e Innovación PGC2018-095032-B-100 Ministerio de Ciencia e Innovación SEV-2017-0706 "la Caixa" Foundation LCF/BQ/DI18/11660030 |
Derechos: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
Lengua: | Anglès |
Documento: | Article ; recerca ; Versió publicada |
Materia: | Bi2Te3 ; Graphene−topological insulator interface ; Intermixing ; Passivation ; XPS |
Publicado en: | Advanced materials interfaces, Vol. 9, issue 36 (Des. 2022) , art. 2201997, ISSN 2196-7350 |
7 p, 891.3 KB |