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Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–AlxGa1−xAs
Estop i Graells, Eugènia (Centre national de la recherche scientifique (França). Laboratoire de Minéralogie Cristallographie)
Izrael, A. (Centre national de la recherche scientifique (França). Laboratoire de Minéralogie Cristallographie)
Sauvage, M. (Centre national de la recherche scientifique (França). Laboratoire de Minéralogie Cristallographie)

Date: 1976
Abstract: Heterojunctions GaAs-AlxGa1-xAs involved in the elaboration of IR laser diodes have been studied. The difference in lattice parameter between the GaAs substrate and the aluminum-substituted epitaxic layer AlxGa1-xAs has been measured accurately on a double-crystal spectrometer for a series of compositions. These data coupled with radius of curvature determination have permitted calculation of the stress in the layer and the bulk lattice parameter of AlxGa1-xAs. Characterization of the defects introduced during the liquid-phase epitaxy has been performed by X-ray topography.
Rights: Tots els drets reservats.
Language: Anglès.
Document: article ; publishedVersion
Subject: Cristal·lografia ; Crystallography
Published in: Acta crystallographica.Section A, Foundations of crystallography, Vol. 32, Issue. 4 (July 1976) , p. 627-632, ISSN 1600-5724

DOI: 10.1107/S0567739476001307


6 p, 1.3 MB

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 Record created 2008-07-29, last modified 2019-02-10



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