Assessment of large critical electric field in ultra-wide bandgap p-type spinel ZnGa2O4
Chi, Zeyu (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics)
Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Gamsakhurdashvili, Tsotne (Ivane Javakhishvili Tbilisi State University. Department of Physics)
Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Yamano, Hayate (Danube University Krems. Department for Integrated Sensor Systems)
Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Dumont, Yves (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Medjdoub, Farid (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie)
Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée)

Date:	2023
Abstract:	The spinel zinc gallate ZnGaO stands out among the emerging ultra-wide bandgap (∼5 eV) semiconductors as the ternary complex oxide with the widest gap where bipolar conductivity has been demonstrated. For power and energy electronics, a fundamental property of the material is its critical electric field (E CR) although, for ZnGaO, is yet unknown. In this work, highly resistive p-type ZnGaO thin films on sapphire and Si substrates were grown by metal organic chemical vapor deposition to determine both, the remote acceptor concentration and vertical breakdown voltage. Hall Effect measurements confirmed a low carrier concentration at room temperature of ∼10 cm. From vertical metal-semiconductor-metal structures the average E has been estimated to be of at least 5. 3 MV cm, which already is significantly larger than the one of SiC and GaN.
Grants:	Ministerio de Economía y Competitividad SEV-2017-0706
Note:	Altres ajuts: the ICN2 is funded also by the CERCA programme / Generalitat de Catalunya
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Ultra-wide band gap ; ZnGa2O4 ; Electrical properties ; Critical electric field
Published in:	Journal of Physics D: Applied Physics, Vol. 56, núm. 10 (March 2023) , art. 105102, ISSN 1361-6463

DOI: 10.1088/1361-6463/acbb14

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