Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
Miranda, Enrique (Universitat Autònoma de Barcelona)
Aguirre, Fernando Leonel (Universitat Autònoma de Barcelona)
Salvador, E. (Universitat Autònoma de Barcelona)
Bargallo Gonzalez, Mireia (Institut de Microelectrònica de Barcelona)
Campabadal, Francesca (Institut de Microelectrònica de Barcelona)
Suñé, Jordi 1963- (Universitat Autònoma de Barcelona)

Date:	2023
Abstract:	The application of constant electrical stress to a metal-insulator-semiconductor (MOS) or metal-insulator-metal (MIM) structure can generate multiple breakdown events in the dielectric film. Very often, these events are detected as small jumps in the current-time characteristic of the device under test and can be treated from the stochastic viewpoint as a counting process. In this letter, a wide variety of standard reliability growth models for this process are assessed in order to determine which option provides the best simulation results compatible with the experimental observations. For the generation of the breakdown event arrivals, two alternative stochastic methods for the power-law Poisson process are investigated: first, the inversion algorithm for the cumulative distribution function and second, an on-the-fly method based on the so-called rejection algorithm. Though both methods are equivalent, the first one is more appropriate for data analysis using spreadsheet calculations while the second one is highly suitable for circuit simulation environments like LTSpice. The connection of the selected nonhomogeneous Poisson process with the Weibull model for dielectric breakdown is also discussed.
Grants:	Agencia Estatal de Investigación PID2022-139586NB-C41 Agencia Estatal de Investigación PID2022-139586NB-C42 Agencia Estatal de Investigación RYC2020-030150-I Agència de Gestió d'Ajuts Universitaris i de Recerca 2020/FISDU-00261
Note:	Altres ajuts: acords transformatius de la UAB
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Dielectric breakdown ; Oxide breakdown ; MOS ; MIM ; Oxide reliability
Published in:	Solid-state electronics, Vol. 210 (December 2023) , art. 108812, ISSN 1879-2405

DOI: 10.1016/j.sse.2023.108812

5 p, 2.8 MB

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