Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs
Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Pacheco-Sánchez, Aníbal (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Wei, Wei (Université de Lille)
Pallecchi, Emiliano (Université de Lille)
Happy, Henri (Université de Lille)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2023
Abstract:	We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is precisely validated by high-frequency (up to 18 GHz) on-wafer measurements from a 300 nm device. These parameters are studied simultaneously, in contrast to other works which focus exclusively on few. Efficient procedures have been applied to GFETs for the first time to remove contact and gate resistances from the Y-parameters. The use of these methods yields straightforward equations for extracting the small-signal model parameters, which is extremely useful for radio-frequency circuit design. Furthermore, we show for the first time experimental validation vs. both gate voltage and frequency of the intrinsic GFET non-reciprocal capacitance model. Accurate models are also presented for the gate voltage-dependence of the measured unity-gain and maximum oscillation frequencies as well as of the current and power gains.
Grants:	European Commission 881603 Agencia Estatal de Investigación RTI2018-097876-B-C21 Agencia Estatal de Investigación FJC2020-046213-I Agencia Estatal de Investigación PID2021-127840NB-I00 Generalitat de Catalunya 001-P-001702
Note:	Altres ajuts: acords transformatius de la UAB
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Bias- and frequency-dependence ; Graphene transistor (GFET) ; RF circuit Design ; Small-signal compact model
Published in:	Microelectronics Journal, Vol. 133 (March 2023) , art. 105715, ISSN 0026-2692

DOI: 10.1016/j.mejo.2023.105715

7 p, 5.0 MB

The record appears in these collections:
Articles > Research articles
Articles > Published articles