| Home > Articles > Published articles > Resonant tunneling diodes in semiconductor microcavities : |
| Date: | 2022 |
| Description: | 25 pàg. |
| Abstract: | We develop in this work a qualitative quantum electron transport model, in the strong light-matter coupling regime under dipole approximation, able to capture polaritonic signatures in the time-dependent electrical current. The effect of the quantized electromagnetic field in the displacement current of a resonant tunneling diode inside an optical cavity is analyzed. The original peaks of the bare electron transmission coefficient split into two new peaks due to the resonant electron-photon interaction, leading to coherent Rabi oscillations among the polaritonic states that are developed in the system in the strong coupling regime. This mimics known effects predicted by a Jaynes-Cummings model in closed systems and shows how a full quantum treatment of electrons and electromagnetic fields may open interesting paths for engineering new THz electron devices. The computational burden involved in the multi-time measurements of THz currents is tackled by invoking a Bohmian description of the light-matter interaction. We also show that the traditional static transmission coefficient used to characterize DC quantum electron devices has to be substituted by a new displacement current coefficient in high-frequency AC scenarios. |
| Grants: | European Commission 881603 European Commission 765426 Agencia Estatal de Investigación PID2021-127840NB-I00 Agencia Estatal de Investigación RTI2018-097876-B-C21 Generalitat de Catalunya 001-P-001644 |
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| Language: | Anglès |
| Document: | Article ; recerca ; Versió publicada |
| Subject: | Quantum description of light-matter interaction ; Quantum transport ; Tunnel junctions ; Jaynes-Cummings model ; Landauer formula ; Terahertz techniques ; Tunnel diode resonance |
| Published in: | Physical review B, Vol. 106 Núm. 20 (Nov. 2022) , art. 205306, ISSN 2469-9969 |
25 p, 2.7 MB |