Reliably straining suspended van der Waals heterostructures
Nazzari, Daniele (Technische Universität Wien. Institute of Solid State Electronics)
Genser, Jakob (Technische Universität Wien. Institute of Solid State Electronics)
Sistani, Masiar (Technische Universität Wien. Institute of Solid State Electronics)
Bartmann, Maximilian G. (Technische Universität Wien. Institute of Solid State Electronics)
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
Weber, Walter M. (Technische Universität Wien. Institute of Solid State Electronics)
Lugstein, Alois (Technische Universität Wien. Institute of Solid State Electronics)

Date:	2023
Abstract:	2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cuttingedge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waals heterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful control knob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strain to suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing for the realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using singleand double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained, respectively, up to ∼1. 2% and ∼1. 8%.
Grants:	Agencia Estatal de Investigación PID2020-119777GB-I00 Ministerio de Ciencia e Innovación CEX2019-000917-S Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-01519 Agencia Estatal de Investigación RTI2018-097876-B-C21 Agencia Estatal de Investigación PID2021-127840NB-I00
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	First-principle calculations ; Heterostructures ; Strain measurement ; Graphene ; 2D materials ; Raman spectroscopy
Published in:	APL materials, Vol. 11, Issue 11 (November 2023) , art. 111123, ISSN 2166-532X

DOI: 10.1063/5.0166460

8 p, 8.4 MB

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Articles > Research articles
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