Low disorder and high valley splitting in silicon
Degli Esposti, Davide (Delft University of Technology. QuTech and Kavli Institute of Nanoscience)
Stehouwer, Lucas E.A. (QuTech and Kavli Institute of Nanoscience. Delft University of Technology)
Gül, Önder (QuTech and Netherlands Organisation for Applied Scientific Research)
Samkharadze, Nodar (QuTech and Netherlands Organisation for Applied Scientific Research)
Déprez, Corentin (Delft University of Technology. QuTech and Kavli Institute of Nanoscience)
Meyer, Marcel (Delft University of Technology. QuTech and Kavli Institute of Nanoscience)
Meijer, Ilja N. (Delft University of Technology. QuTech and Kavli Institute of Nanoscience)
Tryputen, Larysa (QuTech and Netherlands Organisation for Applied Scientific Research)
Karwal, Saurabh (QuTech and Netherlands Organisation for Applied Scientific Research)
Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Amitonov, Sergey V. (QuTech and Netherlands Organisation for Applied Scientific Research)
Vandersypen, Lieven M. K (Delft University of Technology. QuTech and Kavli Institute of Nanoscience)
Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research)
Veldhorst, Menno (Delft University of Technology. QuTech and Kavli Institute of Nanoscience)
Scappucci, Giordano (Delft University of Technology. QuTech and Kavli Institute of Nanoscience)

Fecha:	2024
Resumen:	The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically purified, strained quantum wells with high mobility of 3. 14(8) × 10 cm V s and low percolation density of 6. 9(1) × 10 cm. These low disorder quantum wells support quantum dots with low charge noise of 0. 9(3) μeV Hz and large mean valley splitting energy of 0. 24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.
Ayudas:	European Commission 951852 Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00457 Agencia Estatal de Investigación CEX2021-001214-S Agència de Gestió d'Ajuts Universitaris i de Recerca 2020/FI-00103
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Charge noise ; Critical steps ; Development cycle ; Electrical characterization ; Energy separations ; Heterogeneous materials ; Property ; Quantum device ; Spin qubit ; Valley splitting
Publicado en:	npj Quantum Information, Vol. 10 (March 2024) , art. 32, ISSN 2056-6387

DOI: 10.1038/s41534-024-00826-9

9 p, 2.6 MB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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