Hysteresis in memristors produces conduction inductance and conduction capacitance effects
Bisquert, Juan (Universitat Jaume I)
Roldán, Juan B. (Universidad de Granada)
Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Fecha:	2024
Resumen:	Memristors are devices in which the conductance state can be alternately switched between a high and a low value by means of a voltage scan. In general, systems involving a chemical inductor mechanism as solar cells, asymmetric nanopores in electrochemical cells, transistors, and solid state memristive devices, exhibit a current increase and decrease over time that generates hysteresis. By performing small signal ac impedance spectroscopy, we show that memristors, or any other system with hysteresis relying on the conductance modulation effect, display intrinsic dynamic inductor-like and capacitance-like behaviours in specific input voltage ranges. Both the conduction inductance and the conduction capacitance originate in the same delayed conduction process linked to the memristor dynamics and not in electromagnetic or polarization effects. A simple memristor model reproduces the main features of the transition from capacitive to inductive impedance spectroscopy spectra, which causes a nonzero crossing of current-voltage curves. Memristors display hysteresis effects in the form of self-crossing looping current-voltage curves. We show intrinsic dynamic inductor-like (conduction inductance) and capacitance-like (conduction capacitance) behaviours.
Ayudas:	Agencia Estatal de Investigación PID2022-139586NB-C41 Agencia Estatal de Investigación PID2022-139586NB-C44 European Commission 101097688
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Publicado en:	Physical chemistry chemical physics, Vol. 26, Issue 18 (May 2024) , p. 13804-13813, ISSN 1463-9084

DOI: 10.1039/d4cp00586d
PMID: 38655741

10 p, 1.9 MB

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