Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Pacheco-Sanchez, Anibal (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores)
Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia)
Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona)
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2025
Abstract:	For the growth of emerging graphene field effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physical mechanisms known to generate 1/f noise in transistors, such as carrier number and Coulomb scattering mobility fluctuations, are also revealed to cause (ID) variance. Such effects are considered in the model by being activated locally in the channel and the integration of their contributions from source to drain results in total variance. The proposed model is experimentally validated from a statistical population of three different-sized solution-gated (SG) GFETs from strong p- to strong n-type bias conditions. A series resistance (ID) variance model is also derived mainly contributing at high carrier densities.
Grants:	European Commission 881603 Agencia Estatal de Investigación RTI2018-097876-B-C21 Agencia Estatal de Investigación FJC2020-046213-I Agencia Estatal de Investigación PID2021-127840NB-I00
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Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Variability ; Compact model ; Graphene transistor (GFET) ; Carrier number fluctuation ; Coulomb scattering ; Circuit-design ; Impurities
Published in:	IEEE transactions on electron devices, Vol. 72, Issue 6 (June 2025) , p. 3314-3321, ISSN 1557-9646

DOI: 10.1109/TED.2025.3560616

Available from: 2027-06-30 Postprint

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles