Static and small-signal modeling of radiofrequency hexagonal boron nitride switches
Pacheco-Sanchez, Anibal (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jordan-Garcia, Omar (Instituto Politécnico Nacional (Mexico))
Ramirez-Garcia, Eloy (Instituto Politécnico Nacional (Mexico))
Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2023
Description:	7 pàg.
Abstract:	A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is presented. The I-V characteristics intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF 2D switches fabricated with hBN are described here by a equivalent circuit models. Straightforward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state, i. e. , a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism. The highest mean relative error obtained between modeling and measurements of the return loss is of 7. 6% with the approach presented here which overcomes the 42. 5% of difference obtained with a previous model with an incomplete intrinsic device description.
Grants:	Agencia Estatal de Investigación RTI2018-097876-B-C21 Agencia Estatal de Investigación PID2021-127840NB-I00 Ministerio de Ciencia e Innovación FJC2020-046213-I Generalitat de Catalunya 001-P-001702 European Commission 881603
Rights:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	2D ; Hbn ; Impedance ; Insertion loss ; Isolation ; Loss measurement ; Performance evaluation ; Radio frequency ; Resistance ; Resistive switching ; RF switch ; Switches
Published in:	IEEE Journal of the Electron Devices Society, Vol. 11 (April 2023) , p. 658-664, ISSN 2168-6734

DOI: 10.1109/JEDS.2023.3268349

7 p, 1.7 MB

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