Input-Referred Low-Frequency Noise Analysis for Single-Layer Graphene FETs
Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2021
Abstract:	The bias dependence of input-referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in CMOS but this was contradicted by recent experimental and theoretical studies. In this brief, the behavior of SVG is investigated for single-layer graphene transistors (GFETs) based on a recently established physics-based compact model. A minimum of SVG is recorded at the bias point where transconductance is maximum which coincides with the peak of the well-known M-shape of the normalized output LFN; the model precisely captures this trend. Mobility fluctuation effect increases SVG toward lower currents near charge neutrality point (CNP), while carrier number fluctuation and series resistance effects mostly contribute away from CNP; thus, SVG obtains a parabolic shape versus gate voltage similar to CMOS devices.
Grants:	European Commission 785219 European Commission 881603 Agencia Estatal de Investigación RTI2018-097876-B-C21
Note:	Altres ajuts: Reference of the GraphCAT project: 001-P-001702
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Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Circuit design ; Compact model ; Graphene transistor (GFET) ; Input-referred low-frequency noise (LFN)
Published in:	IEEE Transactions on Electron Devices, Vol. 68, Issue 9 (September 2021) , p. 4762-4765, ISSN 0018-9383

DOI: 10.1109/TED.2021.3100003

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