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10 p, 4.7 MB Rotated domains in selective area epitaxy grown ZnP : formation mechanism and functionality / Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ; Escobar Steinvall, Simon (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Dzade, Nelson Y. (Pennsylvania State University. Department of Energy and Mineral Engineering) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Torres-Vila, Pol (Institut Català de Nanociència i Nanotecnologia) ; Stutz, Elias Z. (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Zamani, Mahdi (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Paul, Rajrupa (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Leran, Jean-Baptiste (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratory of Semiconductor Materials) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Zinc phosphide (ZnP) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. [...]
2021 - 10.1039/d1nr06190a
Nanoscale, Vol. 13, Issue 44 (November 2021) , p. 18441-18450  
Detailed record - Creative Commons

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