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6 p, 1.6 MB A study on free-standing 3C-SiC bipolar power diodes / Li, Fan (University of Warwick. School of Engineering) ; Renz, Arne Benjamin (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick. School of Engineering) ; Gammon, Peter (University of Warwick. School of Engineering) ; La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi) ; Jennings, Mike (Swansea University. College of Engineering) ; Mawby, Philip (University of Warwick. School of Engineering)
A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. [...]
2021 - 10.1063/5.0054433
Applied physics letters, Vol. 118, issue 24 (June 2021) , art. 242101  

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