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7 p, 1.5 MB An improved analytical model for the statistics of SET emergence point in HfO2 memristive device / Xiang, Dong (Harbin Institute of Technology. School of Mechatronics Engineering (China)) ; Zhang, Rulin (Hubei University. Hubei Key Laboratory of Applied Mathematics (China)) ; Li, Yu (Institute of Microelectronics of Chinese Academy of Sciences. Key Laboratory of Microelectronics Devices and Integration Technology (China)) ; Ye, Cong (Hubei University. Hubei Key Laboratory of Applied Mathematics (China)) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Long, Shibing (University of Science and Technology of China. School of Microelectronics (China))
In this work, an improved analytical model for the SET switching statistics of HfO2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. [...]
2019 - 10.1063/1.5085685
AIP advances, Vol. 9, Issue 2 (February 2019) , art. 025118  

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