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Status and prospects of cubic silicon carbide power electronics device technology / Li, Fan (Newport Wafer Fab) ; Roccaforte, Fabrizio (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Greco, Giuseppe (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Fiorenza, Patrick (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; La Via, Francesco (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia)) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Evans, Jonathan Edward (Swansea University. Faculty of Science) ; Fisher, Craig Arthur (Swansea University. Faculty of Science) ; Monaghan, Finn Alec (Swansea University. Faculty of Science) ; Mawby, Philip Andrew (The University of Warwick. School of Engineering) ; Jennings, Mike (Swansea University. Faculty of Science)
Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. [...]
2021 - DOI (Digital Object Identifier)

10.3390/ma14195831
Materials, Vol. 14, issue 19 (Oct. 2021) , art. 5831

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