Status and prospects of cubic silicon carbide power electronics device technology
Li, Fan (Newport Wafer Fab)
Roccaforte, Fabrizio (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia))
Greco, Giuseppe (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia))
Fiorenza, Patrick (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia))
La Via, Francesco (Istituto per la Microelettronica e Microsistemi (Catània, Itàlia))
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Evans, Jonathan Edward (Swansea University. Faculty of Science)
Fisher, Craig Arthur (Swansea University. Faculty of Science)
Monaghan, Finn Alec (Swansea University. Faculty of Science)
Mawby, Philip Andrew (The University of Warwick. School of Engineering)
Jennings, Mike (Swansea University. Faculty of Science)

Data:	2021
Resum:	Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. At present the material remains firmly in the research domain due to numerous technological impediments that hamper its widespread adoption. The most obvious obstacle is defect-free 3C-SiC; presently, 3C-SiC bulk and heteroepitaxial (on-silicon) display high defect densities such as stacking faults and antiphase boundaries. Moreover, heteroepitaxy 3C-SiC-on-silicon means low temperature processing budgets are imposed upon the system (max. temperature limited to ~1400 °C) limiting selective doping realisation. This paper will give a brief overview of some of the scientific aspects associated with 3C-SiC processing technology in addition to focussing on the latest state of the art results. A particular focus will be placed upon key process steps such as Schottky and ohmic contacts, ion implantation and MOS processing including reliability. Finally, the paper will discuss some device prototypes (diodes and MOSFET) and draw conclusions around the prospects for 3C-SiC devices based upon the processing technology presented.
Ajuts:	European Commission 720827
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	3C-SiC ; Cubic silicon carbide ; Power electronics
Publicat a:	Materials, Vol. 14, issue 19 (Oct. 2021) , art. 5831, ISSN 1996-1944

DOI: 10.3390/ma14195831
PMID: 34640228

22 p, 4.1 MB

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