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1.
29 p, 1.9 MB A walk on the frontier of energy electronics with power ultra-wide bandgap oxides and ultra-thin neuromorphic 2D materials / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint-Quentin-en-Yvelines) ; Rogers, David J. (Nanovation)
Ultra-wide bandgap (UWBG) semiconductors and ultra-thin two-dimensional materials (2D) are at the very frontier of the electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and deeper ultraviolet optoelectronics. [...]
2021 - 10.1117/12.2590747
Proceedings of SPIE, Vol. 11687 (2021) , p. 2590747  
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2.
15 p, 1.1 MB Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M. R. (University of Warwick) ; Russell, Stephen A. O. (University of Warwick) ; Teherani, Féréchteh Hosseini (Nanovation) ; Bove, Philippe (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Rogers, David J. (Nanovation)
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. [...]
2018 - 10.1117/12.2302576
Proceedings of SPIE, Vol. 10533 (February 2018) , art. 105331Q  
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3.
36 p, 830.9 KB Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M. R. (Swansea University) ; Russell, Stephen A. O. (University of Warwick) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia) ; Ton-That, C. (University of Technology Sydney) ; Teherani, Féréchteh Hosseini (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Bove, Philippe (Nanovation) ; Rogers, David J. (Nanovation)
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-GaO) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V) under typical indoor light. [...]
2019 - 10.1016/j.mtener.2019.100350
Materials today energy, Vol. 14 (December 2019) , art. 100350  
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4.
22 p, 880.5 KB Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Rogers, David J. (Nanovation) ; Teherani, Féréchteh Hosseini (Nanovation) ; Rubio Lorente, Carles (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Von Bardeleben, Hans Jürgen (Institut des Nanosciences de Paris) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Bove, Philippe (Nanovation) ; Sandana, Éric V. (Nanovation) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. [...]
2019 - 10.1016/j.mtphys.2018.11.006
Materials today physics, Vol. 8 (March 2019) , p. 10-17  
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Vegeu també: autors amb noms similars
1 Rogers, D. Christopher
13 Rogers, Daryl
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