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1.
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9 p, 1.2 MB |
Methodology for the simulation of the variability of MOSFETs with polycrystalline high-k dielectrics using CAFM input data
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Ruiz, Ana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Couso, Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Seoane, Natalia (Universidade de Santiago de Compostela. Citius) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Garcia-Loureiro, Antonio (Universidade de Santiago de Compostela. Citius) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, a simulation methodology, whose inputs are Conductive Atomic Force Microscope (CAFM) experimental data, is proposed to evaluate the impact of nanoscale variability sources related to the polycrystallization of high-k dielectrics (i. [...]
2021 -  10.1109/ACCESS.2021.3090472
IEEE Access, Vol. 9 (2021) , p. 90568-90576
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2.
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12 p, 2.1 MB |
Enabling full-scale grain boundary mitigation in polycrystalline perovskite solids
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Zhao, Lichen (Peking University. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics) ;
Tang, PengYi (Institut Català de Nanociència i Nanotecnologia) ;
Luo, Deying (Peking University. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics) ;
Dar, Ibrahim (University of Cambridge. Department of Physics) ;
Eickemeyer, Felix (École Polytechnique Fédérale de Lausanne. Laboratory of Photonics and Interfaces) ;
Arora, Neha (University of Cambridge. Department of Physics) ;
Hu, Qin (University of Massachusetts. Polymer Science and Engineering Department) ;
Luo, Jingshan (École Polytechnique Fédérale de Lausanne. Laboratory of Photonics and Interfaces) ;
Liu, Yuhang (École Polytechnique Fédérale de Lausanne. Laboratory of Photonics and Interfaces) ;
Zakeeruddin, Shaik Mohammed (École Polytechnique Fédérale de Lausanne. Laboratory of Photonics and Interfaces) ;
Hagfeldt, Anders (École Polytechnique Fédérale de Lausanne. Laboratory of Photomolecular Science) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Huang, Wei (Nanjing Tech University. Key Laboratory of Flexible Electronics & Institute of Advanced Materials) ;
Gong, Qihuang (Peking University. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics) ;
Russell, Thomas (University of Massachusetts. Polymer Science and Engineering Department) ;
Friend, Richard Henry (University of Cambridge. Department of Physics) ;
Grätzel, Michael (École Polytechnique Fédérale de Lausanne. Laboratory of Photonics and Interfaces) ;
Zhu, Rui (Peking University. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics)
There exists a considerable density of interaggregate grain boundaries (GBs) and intra-aggregate GBs in polycrystalline perovskites. Mitigation of intra-aggregate GBs is equally notable to that of interaggregate GBs as intra-aggregate GBs can also cause detrimental effects on the photovoltaic performances of perovskite solar cells (PSCs). [...]
2022 - 10.1126/sciadv.abo3733
Science advances, Vol. 8, issue 35 (Sep. 2022) , art. eabo3733
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3.
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10 p, 4.2 MB |
Thermal properties of nanocrystalline silicon nanobeams
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Maire, Jeremie (Institut Català de Nanociència i Nanotecnologia) ;
Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia) ;
Arregui Bravo, Guillermo (Universitat Autònoma de Barcelona. Departament de Física) ;
Colombano Sosa, Martin (Institut Català de Nanociència i Nanotecnologia) ;
Capuj, Nestor Eduardo (Universidad de La Laguna. Instituto Universitario de Materiales y Nanotecnología) ;
Griol, Amadeu. (Universitat Politècnica de València. Nanophotonics Technology Center) ;
Martínez, Alejandro (Universitat Politècnica de València. Nanophotonics Technology Center) ;
Navarro Urrios, Daniel (Institut Català de Nanociència i Nanotecnologia) ;
Ahopelto, Jouni (VTT Technical Research Centre of Finland Ltd) ;
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Controlling thermal energy transfer at the nanoscale and thermal properties has become critically important in many applications since it often limits device performance. In this study, the effects on thermal conductivity arising from the nanoscale structure of free-standing nanocrystalline silicon films and the increasing surface-to-volume ratio when fabricated into suspended optomechanical nanobeams are studied. [...]
2022 - 10.1002/adfm.202105767
Advanced functional materials, Vol. 32, issue 4 (Jan. 2022) , art. 2105767
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4.
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14 p, 961.9 KB |
Fracturing of Polycrystalline MoS2Nanofilms
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Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ;
Jumbert Amblàs, Gil (Universitat Autònoma de Barcelona. Departament de Física) ;
Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ;
Arrighi, Aloïs (Institut Català de Nanociència i Nanotecnologia) ;
Xiao, Peng (Institut Català de Nanociència i Nanotecnologia) ;
Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ;
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
The possibility of tailoring the critical strain of two-dimensional (2D) materials will be crucial for the fabrication of flexible and stretchable devices. While crystalline MoS2 monolayer shows tensile strength comparable to that of steel, a large concentration of defects and grain boundaries in polycrystalline MoS2 significantly degrades its mechanical properties. [...]
2020 - 10.1021/acsaelm.0c00189
ACS applied electronic materials, Vol. 2, Num. 4 (April 2020) , p. 1169-1175
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5.
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5 p, 403.8 KB |
Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
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Ruiz, Ana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Seoane, Natalia (Universidade de Santiago de Compostela. Citius) ;
Claramunt, Sergi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Garcia-Loureiro, Antonio (Universidade de Santiago de Compostela. Citius) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Couso, Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
A more realistic approach to evaluate the impact of polycrystalline metal gates on the MOSFET variability is presented. 2D experimental workfunction maps of a polycrystalline TiN layer were obtained by Kelvin Probe Force Microscopy with a nanometer resolution. [...]
2019 - 10.1063/1.5090855
Applied physics letters, Vol. 114, issue 9 (March 2019) , art. 93502
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6.
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10 p, 3.9 MB |
Universal Spin Diffusion Length in Polycrystalline Graphene
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Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Dubois, Simon M. M. (Université Catholique de Louvain) ;
Charlier, Jean Christophe (Université Catholique de Louvain) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 μm, which is on par with the best measurements made in single-crystal graphene. [...]
2019 - 10.1021/acs.nanolett.9b03112
Nano letters, Vol. 19, Issue 10 (October 2019) , p. 7418-7426
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7.
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65 p, 1.8 MB |
Inductively coupled remote plasma-enhanced chemical vapor deposition (rPE-CVD) as a versatile route for the deposition of graphene micro- and nanostructures
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González Cuxart, Marc (Institut Català de Nanociència i Nanotecnologia) ;
Šics, Igors (ALBA Laboratori de Llum de Sincrotró) ;
Goñi, Alejandro R. (Institut de Ciència de Materials de Barcelona) ;
Pach, Elzbieta (Institut Català de Nanociència i Nanotecnologia) ;
Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ;
Paradinas Aranjuelo, Marcos (Institut Català de Nanociència i Nanotecnologia) ;
Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ;
Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ;
Moreno Fernández, Harol Aníbal (ALBA Laboratori de Llum de Sincrotró) ;
Carlino, Vincent (Ibss Group Inc) ;
Pellegrin, Eric (ALBA Laboratori de Llum de Sincrotró)
Multiple layers of graphene thin films with micro-crystalline orientation and vertical graphene nano-sheets were grown on different substrates (i. e. , polycrystalline nickel foil, Ni(111), highly oriented pyrolytic graphite) using a single-step process based on low-pressure remote Plasma-Enhanced Chemical Vapor Deposition (rPE-CVD). [...]
2017 - 10.1016/j.carbon.2017.02.067
Carbon, Vol. 117 (June 2017) , p. 331-342
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8.
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17 p, 3.3 MB |
Grain boundary-induced variability of charge transport in hydrogenated polycrystalline graphene
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Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ;
Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ;
Soriano, David (Institut Català de Nanociència i Nanotecnologia) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Chemical functionalization has proven to be a promising means of tailoring the unique properties of graphene. For example, hydrogenation can yield a variety of interesting effects, including a metal-insulator transition or the formation of localized magnetic moments. [...]
2017 - 10.1088/2053-1583/aa59de
2D Materials, Vol. 4, Núm. 2 (June 2017) , article 25009
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9.
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14 p, 2.0 MB |
Scaling properties of polycrystalline graphene : A review
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Isacsson, Andreas (Chalmers University of Technology (Göteborg, Suècia)) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luigi (Texas Instruments, Inc. (Dallas, Estats Units d'Amèrica)) ;
Kinaret, Jari M. (Chalmers University of Technology (Göteborg, Suècia)) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young's modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. [...]
2017 - 10.1088/2053-1583/aa5147
2D Materials, Vol. 4, Núm. 1 (March 2017) , article 012002
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10.
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25 p, 7.5 MB |
Electrical and Thermal Transport in Coplanar Polycrystalline Graphene-hBN Heterostructures
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Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ;
Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya)) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Martínez Gordillo, Rafael (Aix-Marseille Université) ;
Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ;
Rabczuk, Timon (Bauhaus-Universität Weimar (Alemanya)) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. [...]
2017 - 10.1021/acs.nanolett.6b04936
Nano letters, Vol. 17 Núm. 3 (March 2017) , p. 1660-1664
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