Per citar aquest document: http://ddd.uab.cat/record/116002
Electrical characterization of the soft breakdown failure mode in MgO layers
Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
O'Connor, E. (University College Cork. Tyndall National Institute)
Hughes, G. (Dublin City University. School of Physical Sciences)
Casey, P. (Dublin City University. School of Physical Sciences)
Cherkaoui, K. (University College Cork. Tyndall National Institute)
Monaghan, S. (University College Cork. Tyndall National Institute)
Long, R. (University College Cork. Tyndall National Institute)
O'Connell, D. (University College Cork. Tyndall National Institute)
Hurley, P. K. (University College Cork. Tyndall National Institute)
American Physical Society

Data: 2009
Resum: The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V)characteristics follow the power-law model I=aVb typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO2. The relationship between the magnitude of the current and the normalized differential conductance was analyzed.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Electrical properties ; Dielectric breakdown ; Electron beam deposition ; Leakage currents ; Electrical breakdown ; Electric currents ; Metal insulator semiconductor structures ; Statistical properties ; Transport propertiesT ; Tunneling
Publicat a: Applied Physics Letters, Vol. 95, Issue 1 (July 2009) , p. 012901/1-012901/3, ISSN 1077-3118

DOI: 10.1063/1.3167827


4 p, 345.8 KB

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