Per citar aquest document: http://ddd.uab.cat/record/116288
Local oxidation of silicon surfaces by dynamic force microscopy : nanofabrication and water bridge formation
García, Ricardo (Instituto de Microelectronica de Madrid)
Calleja, M. (Instituto de Microelectronica de Madrid)
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 1998
Resum: Local oxidation of siliconsurfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. It is demonstrated that during the oxidation, tip and sample are separated by a gap of a few nanometers. The existence of a gap increases considerably the effective tip lifetime for performing lithography. A threshold voltage between the tip and the sample must be applied in order to begin the oxidation. The existence of a threshold voltage is attributed to the formation of a water bridge between tip and sample. It is also found that the oxidation kinetics is independent of the force microscopy mode used (contact or noncontact).
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Surface oxidation ; Atomic force microscopy ; Oxidation ; Silicon ; Surface dynamics ; Nanofabrication ; Nanolithography
Publicat a: Applied Physics Letters, Vol. 72, Issue 18 (May 1998) , p. 2295-2297, ISSN 1077-3118

DOI: 10.1063/1.121340


4 p, 414.9 KB

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