Per citar aquest document: http://ddd.uab.cat/record/116309
Modification of HF-treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament de Física)
Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament de Física)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física)
American Physical Society

Data: 1992
Resum: The modification of HF‐etched silicon (100) surface with a scanning tunneling microscope(STM) operated in air is studied for the first time in samples subjected to the standard HF etching without the follow‐up rinsing in H2O. The modifications are produced in air under normal STM imaging conditions (V t =−1. 4 V and I t =2 nA). The simultaneous acquisition of topographical, current image tunneling spectroscopy and local barrier‐height images clearly shows that the nature of the modification is not only topographical but also chemical. The features produced with a resolution better than 25 nm are attributed to a tip‐induced oxidation enhanced by the presence of fluorine on the surface.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Scanning tunneling microscopy ; Silicon ; Surface oxidation ; Surface treatments ; Etching ; Nonlinear acoustics ; Scanning tunneling microscopes ; Tunneling ; Water vapor
Publicat a: Applied Physics Letters, Vol. 61, Issue 4 (July 1992) , p. 462-464, ISSN 1077-3118

DOI: 10.1063/1.107885


4 p, 630.0 KB

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