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Pàgina inicial > Articles > Articles publicats > Non-homogeneuos conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM |
Data: | 2015 |
Resum: | Conductive filaments (CFs) in Ni/HfO₂/Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM). Differences in the CF conductivity are measured depending on the resistive state of the device. Moreover, for both resistance states, non-homogeneous conduction across the CF area is observed, in agreement with a tree-shaped CF. |
Ajuts: | Ministerio de Economía y Competitividad TEC2013-45638-C3-1-R Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384 |
Nota: | Altres ajuts: ERDF/TEC2011-2792-C02-02 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Resistive switching ; CAFM ; Metal-insulator-semiconductor (MIS) |
Publicat a: | Microelectronic engineering, Vol. 147 (November 2015) , p. 335-338, ISSN 0167-9317 |
Post-print 4 p, 1.6 MB |