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Pàgina inicial > Articles > Articles publicats > Identifying the nature of surface chemical modification for directed self-assembly of block copolymers |
Data: | 2017 |
Resum: | In recent years, block copolymer lithography has emerged as a viable alternative technology for advanced lithography. In chemical-epitaxy-directed self-assembly, the interfacial energy between the substrate and each block copolymer domain plays a key role on the final ordering. Here, we focus on the experimental characterization of the chemical interactions that occur at the interface built between different chemical guiding patterns and the domains of the block copolymers. We have chosen hard X-ray high kinetic energy photoelectron spectroscopy as an exploration technique because it provides information on the electronic structure of buried interfaces. The outcome of the characterization sheds light onto key aspects of directed self-assembly: grafted brush layer, chemical pattern creation and brush/block co-polymer interface. |
Ajuts: | European Commission 619793 European Commission 318804 European Commission 288879 Ministerio de Economía y Competitividad TEC2015-69864-R Ministerio de Economía y Competitividad SEV-2013-0295 Ministerio de Economía y Competitividad MAT2013-4458-R Ministerio de Educación y Ciencia FPU/13/03746 |
Nota: | The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: http://www.beilstein-journals.org/bjnano |
Drets: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió publicada |
Matèria: | Block copolymer ; Chemical guiding pattern ; Directed self-assembly ; Thin film ; X-ray photoemission spectroscopy |
Publicat a: | Beilstein journal of nanotechnology, Vol. 8 (Sep. 2017) , p. 1972-1981, ISSN 2190-4286 |
10 p, 6.7 MB |