Mapping brain activity with flexible graphene micro-transistors
Blaschke, Benno M. (Technische Universität München. Physik Department)
Tort-Colet, Núria (Institut d'Investigacions Biomèdiques August Pi i Sunyer)
Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona)
Weinert, Julia (Institut d'Investigacions Biomèdiques August Pi i Sunyer)
Rousseau, Lionel (Université Paris-Est. Laboratoire d'Electronique, Systèmes de Communication et Microsystèmes)
Heimann, Axel (Johannes Gutenberg-Universität Mainz)
Drieschner, Simon (Technische Universität München. Physik Department)
Kempski, Oliver (Johannes Gutenberg-Universität Mainz)
Villa, Rosa (Institut de Microelectrònica de Barcelona)
Sánchez-Vives, María V. (Institut d'Investigacions Biomèdiques August Pi i Sunyer)
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)

Data:	2017
Resum:	Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e. g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future generation of in vivo recording implants.
Ajuts:	European Commission 696656 European Commission 600806 European Commission 280433 Ministerio de Economía y Competitividad SEV-2013-0295
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Bioelectronics ; Field-effect transistors ; Graphene ; Neural implants ; Sensors
Publicat a:	2D materials, Vol. 4, no. 2 (June 2017) , art. 025040

DOI: 10.1088/2053-1583/aa5eff

Post-print 16 p, 4.4 MB

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