Spin transport in dangling-bond wires on doped H-passivated Si(100)
Kepenekian, Mikaël (Institut Català de Nanociència i Nanotecnologia)
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia)
Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
Lorente, Nicolás (Institut Català de Nanociència i Nanotecnologia)

Date:	2014
Abstract:	New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.
Grants:	Ministerio de Economía y Competitividad FIS2012-37549-C05-05 Ministerio de Economía y Competitividad CSD2007-00041 Ministerio de Economía y Competitividad MAT2012-38318-C03-02
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Subject:	DFT ; Dopant ; Electronic transport ; NEGF ; Spintronics
Published in:	Nanotechnology, Vol. 25, Issue 46 (November 2014) , art. 465703, ISSN 1361-6528

DOI: 10.1088/0957-4484/25/46/465703

Preprint 12 p, 755.5 KB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles