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Pàgina inicial > Articles > Articles publicats > Spin transport in dangling-bond wires on doped H-passivated Si(100) |
Data: | 2014 |
Resum: | New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters. |
Ajuts: | Ministerio de Economía y Competitividad FIS2012-37549-C05-05 Ministerio de Economía y Competitividad CSD2007-00041 Ministerio de Economía y Competitividad MAT2012-38318-C03-02 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió sotmesa a revisió |
Matèria: | DFT ; Dopant ; Electronic transport ; NEGF ; Spintronics |
Publicat a: | Nanotechnology, Vol. 25, Issue 46 (November 2014) , art. 465703, ISSN 1361-6528 |
Preprint 12 p, 755.5 KB |