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Pàgina inicial > Articles > Articles publicats > Statistical characterization of time-dependent variability defects using the maximum current fluctuation |
Data: | 2021 |
Resum: | This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology. |
Ajuts: | Ministerio de Ciencia e Innovación PID2019-103869RB Ministerio de Ciencia e Innovación BES-2017-080160 Ministerio de Economía y Competitividad TEC2016-75151-C3 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Bias temperature instability (BTI) ; Maximum current fluctuation (MCF) ; Random telegraph noise (RTN) ; Time-dependent variability (TDV) ; Transistor |
Publicat a: | IEEE Transactions on Electron Devices, Vol. 68, issue 8 (Aug. 2021) , p. 4039-4044, ISSN 0018-9383 |
Postprint 8 p, 666.7 KB |