Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO RRAM devices
Grossi, Alessandro (Università degli Studi di Ferrara. Dipartimento di Ingegneria)
Perez, Eduardo (IHP Im Technologiepark)
Zambelli, Cristian (Università degli Studi di Ferrara. Dipartimento di Ingegneria)
Olivo, Piero (Università degli Studi di Ferrara. Dipartimento di Ingegneria)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Roelofs, Robin (ASM Kapeldreef)
Woodruff, Jacob (E University Dr. ASM America)
Raisanen, Petri (E University Dr. ASM America)
Li, Wei (E University Dr. ASM America)
Givens, Michael (E University Dr. ASM America)
Costina, Ioan (IHP Im Technologiepark)
Schubert, Markus Andreas (IHP Im Technologiepark)
Wenger, Christian (Brandenburg Medical School Theodor Fontane)

Fecha:	2018
Resumen:	The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufacturing. In this paper, the impact of the precursor chemistries and process conditions on the performance of HfO based memristive cells is studied. An extensive characterization of HfO based 1T1R cells, a comparison of the cell-to-cell variability, and reliability study is performed. The cells' behaviors during forming, set, and reset operations are monitored in order to relate their features to conductive filament properties and process-induced variability of the switching parameters. The modeling of the high resistance state (HRS) is performed by applying the Quantum-Point Contact model to assess the link between the deposition condition and the precursor chemistry with the resulting physical cells characteristics.
Derechos:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió publicada
Materia:	Electronic devices ; Materials science
Publicado en:	Scientific reports, Vol. 8 (July 2018) , art. 11160, ISSN 2045-2322

DOI: 10.1038/s41598-018-29548-7
PMID: 30042433

11 p, 2.5 MB

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